کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1646719 1517301 2012 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Double 3-fold-symmetry novel ZnO hierarchical nanostructure arrays: Synthesis, characterization, and photoluminescence properties
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Double 3-fold-symmetry novel ZnO hierarchical nanostructure arrays: Synthesis, characterization, and photoluminescence properties
چکیده انگلیسی

We successfully fabricated a novel highly regular ZnO hierarchical nanostructure with six rows of single crystal ZnO nanowire (NW) arrays in double 3-fold-symmetry, using a two-stage synthesis scheme without any catalyst and chemical reagent. Our synthesis employs a simple thermal evaporation of Zn powder and chemical vapor deposition (CVD) followed by post-annealing. In the first stage, Zn-rich ZnO nanotubes are formed; then in the annealing stage, the resulting Zn-rich ZnO nanotubes provide the backbones and the supply of Zn to grow ZnO NWs. A growth model for ZnO hierarchical nanostructure based on dense arrangement principle is proposed. This novel nanostructure has strong violet emission, high surface area and specific geometric structures. These make it suitable for application on chemical sensors, battery electrodes, solar cells and optoelectronic devices.

Figure optionsDownload as PowerPoint slideHighlights
► Using a two-stage synthesis strategy without catalyst and chemical reagent to fabricate ZnO hierarchical nanostructures.
► Successfully fabricated a novel highly regular ZnO hierarchical nanostructure with 6 rows of single crystal ZnO nanowire arrays in double 3-fold-symmetry, which has not been reported elsewhere.
► Propose a growth model for this nanostructure based on dense arrangement principle.
► These nanostructures have a strong violet emission, benefiting from EX-Zni transforms to a relative higher Zni energy level after annealing.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 86, 1 November 2012, Pages 182–185
نویسندگان
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