Synthesis and high-performance thermoelectric properties of beta-Zn4Sb3 nanowires

Based on physical vapor deposition (PVD) in the absence of any template and catalyst, β-Zn4Sb3 nanowires (NWs) have firstly been synthesized under controlled conditions. Composition, morphology, structure, and thermoelectric property of the fabricated β-Zn4Sb3 products are characterized by different instruments. Moreover, room temperature Hall effects are conducted to study the electric transport property of the as-annealed β-Zn4Sb3 NWs and synthesized powders. In particular, the as-obtained results reveal that the as-annealed β-Zn4Sb3 NWs possess a high dimensionless figure of merit (ZT, 1.59) at 675 K. It is much higher than that of all bulk β-Zn4Sb3 materials (no more than 1.3), which has potential applications for thermoelectric nanodevices.

► For the first time, good quality and homogeneous β-Zn4Sb3 nanowires have been synthesized by physical vapor deposition without any template and catalyst.
► The process of preparation is a simple and an environmentally friendly one.
► High-performance thermoelectric properties (for example, ZT is 1.59 at 675 K) appear in the as-annealed β-Zn4Sb3 nanowires.