کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1646856 | 1517308 | 2012 | 4 صفحه PDF | دانلود رایگان |
We herein report the synthesis of ZnO thin films on a pre-treated p-type silicon substrate by hydrothermal method and its electrical characterization. The as-synthesized nanostructures were characterized by field emission scanning electron microscopy, X-ray diffraction and current–voltage measurements. The presence of citric acid (CA) in the solution resulted in a morphological change from well-aligned nanorods to relatively smooth, compact thin films. As the concentration of the citric acid increased from 1 mM to 5 mM, the thickness of the films decreased from 1.3 μm to 320 nm. All the as-grown nanostructures are crystalline and are preferentially oriented along the c-axis. Finally, the typical current–voltage measurements indicated that the thin films have better rectification with lower leakage currents.
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► ZnO thinfilms were synthesized using hydrothermal method.
► The thin films were grown on a pre-treated p-type silicon substrate.
► The presence of citric acid (CA) in the solution resulted in a morphological change.
► The thickness of the films decreases with increasing concentration of the CA.
► The thin films shows better rectification with lower leakage currents.
Journal: Materials Letters - Volume 79, 15 July 2012, Pages 266–269