Direct evidence of advantage of Cu(111) for graphene synthesis by using Raman mapping and electron backscatter diffraction

The advantageous crystallographic orientation of Cu surface for graphene synthesis by using thermal chemical vapor deposition (CVD) is examined by Raman mapping and electron backscatter diffraction. It is found that Cu(111) predominates over (110) and (100) for single- (SLG) or few-layer graphene (FLG) growth. To confirm this result we attempt the synthesis of graphene on Cu(111) single crystal film surfaces. We confirmed the formation of high quality and high uniformity SLG or FLG over more than 97% of the substrate surface area of 10 mm × 10 mm by Raman mapping.

Research highlights
► A preferable substrate for graphene growth is determined by using EBSD and Raman map.
► Cu(111) is the most appropriate crystallographic plane for graphene growth.
► Cu(111) single crystalline film is epitaxially grown on an Al2O3(0001) substrate.
► Single- or few-layer graphene films are grown on the Cu(111) single crystalline film.
► The graphene films are high quality and large scale (10 mm × 10 mm).