Preparation of grass-like GaN nanostructures: Its PL and excellent field emission properties

► Grass-like GaN nanostructured leaves have been synthesized by CVD method. ► FE properties show turn-on field of 7.82 V μm− 1 and threshold field of 8.96 V μm− 1. ► This turn-on field value is enough for potential use in electron emission devices. ► Strong PL emission peak at 368.8 nm show its vast applications in LEDs and devices.