کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1648004 | 1517323 | 2011 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: In-situ synchrotron x-ray study of the crystallization behavior of Ce0.9La0.1O2 − x thin films deposited on NiW alloy substrates by chemical solution method In-situ synchrotron x-ray study of the crystallization behavior of Ce0.9La0.1O2 − x thin films deposited on NiW alloy substrates by chemical solution method](/preview/png/1648004.png)
The phase and texture formation of La doped CeO2 (CLO) films deposited by the chemical solution method are studied by in situ synchrotron x-ray diffraction. It is found that the CLO crystallites forms excellent in-plane texture as soon as the phase appears at 860 °C, indicating that interfacial nucleation dominates at the beginning of the amorphous–crystallization transition. Grain growth is almost complete after at 900 °C for 15 min. Analysis of the isothermal process of crystallization at 900 °C by the Johnson–Mehl–Avrami–Kolmogorov equation shows that grain development is mainly controlled by diffusion. The success of this work demonstrates the possibility of studying crystallization behaviors of solution derived films using a non-destructive method, which has the potential of being applicable to most types of thin film samples.
Journal: Materials Letters - Volume 65, Issues 17–18, September 2011, Pages 2669–2672