کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1648273 | 1007553 | 2011 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Growth of InN layers on Si (111) using ultra thin silicon nitride buffer layer by NPA-MBE Growth of InN layers on Si (111) using ultra thin silicon nitride buffer layer by NPA-MBE](/preview/png/1648273.png)
Indium nitride (InN) epilayers have been successfully grown by nitrogen-plasma-assisted molecular beam epitaxy (NPA-MBE) on Si (111) substrates using different buffer layers. Growth of a (0001)-oriented single crystalline wurtzite–InN layer was confirmed by high resolution X-ray diffraction (HRXRD). The Raman studies show the high crystalline quality and the wurtzite lattice structure of InN films on the Si substrate using different buffer layers and the InN/β–Si3N4 double buffer layer achieves minimum FWHM of E2 (high) mode. The energy gap of InN films was determined by optical absorption measurement and found to be in the range of ~ 0.73–0.78 eV with a direct band nature. It is found that a double-buffer technique (InN/β–Si3N4) insures improved crystallinity, smooth surface and good optical properties.
Journal: Materials Letters - Volume 65, Issue 9, 15 May 2011, Pages 1396–1399