کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1648334 | 1517324 | 2011 | 4 صفحه PDF | دانلود رایگان |
The growth of GaN nanowires on sapphire substrates coated with Ni or Pt catalyst was investigated to address their behavior in a vapor–liquid–solid mechanism. Our observations revealed that both the two catalysts, which led to the growth of nanowires, behave rather complex, including diffusion and re-agglomeration from the coated films to the surface of the micro crystals that is formed in an early stage of growth by vapor–solid mechanism. GaN nanowires have a diameter and length of ~100 nm and several tens of micrometers, respectively, and tend to align epitaxially on the facets of the micro crystals.
Re-assembling of metal catalyst in the course of the growth of GaN nanowires.Figure optionsDownload as PowerPoint slideHighlights
► Ni and Pt as catalysts for the VLS growth of GaN nanowires.
► Interfacial layers are formed at early stage.
► Catalysts are re-assembled on the interfacial layer in advance of VLS growth.
► Re-assembling makes difficult to control the GaN nanowire growth.
Journal: Materials Letters - Volume 65, Issues 15–16, August 2011, Pages 2458–2461