Effect of Nb2O5 seed layer on electrical properties of alkaline niobate based ferroelectric thin films

K0.5Na0.5NbO3 and K0.5Na0.5Nb0.995V0.005O3 ferroelectric thin films were prepared by a chemical solution deposition method. The Nb2O5 seed layer was introduced to investigate the electrical properties of the films. Crystalline structures and microstructures were analyzed by X-ray diffraction and scanning electron microscope at room temperature. The electrical properties were studied both for the films with and without Nb2O5 seed layer. It is found that the films' quality was modified by adding the seed layer, and the V-doping also plays an important role in improving the films quality. The ferroelectric and dielectric properties of the films were obviously enhanced by adding the seed layer, especially for the V-doped film. These results may be due to the better crystallization and microstructure of the films.

Research Highlights
► Nb2O5 as the seed layer.
► Nb2O5 can modify the quality and enhance the electrical properties of the KNN films.
► The binding between the films and the substrates are enhanced by Nb2O5.
► V-doping also plays an important role for enhancing the crystallization of the films.