Growth of 2H–SiC single crystals in a Li-based flux

Growth of bulk 2H–SiC single crystals in a C–Li–Si ternary melt system was successful. The growth of 2H–SiC must be conducted at lower temperatures than that of other SiC poly-types. The lithium flux solved this problem, as it is usable for growth under 1000 °C due to its low melting temperature. Success in the growth of 2H–SiC single crystals in this study may unlock the potential for realizing high-performance electronic devices by fabricating the devices on 2H–SiC single-crystal substrates.