Optoelectronic properties of TiO2 films prepared by microplasma oxidation method

Thin titanium dioxide films have been prepared on titanium plates by the microplasma oxidation method in a sulfuric acid solution. The TiO2 films were sensitized with a cis-RuL2(SCN)2 (L = cis-2, 2′-bipyridine-4, 4′-dicarboxlic acid) ruthenium and implemented into a dye-sensitized solar cell. The influence of voltage (150, 170, 190 and 210 V) on the microstructure of the films were investigated by X-ray diffraction, scanning electron microscopy and X-ray Photoelectricity spectroscopy. The photoelectric properties of the TiO2 films prepared at 190 V were relatively higher. In the experiment, the photovoltage was 700 mV, the photocurrent was 115 μA/cm2 and the overall efficiency was 0.075%.