کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1650759 1517336 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The influence of growth temperature on ZnO nanowires
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
The influence of growth temperature on ZnO nanowires
چکیده انگلیسی

ZnO nanowires have been successfully synthesized on Si(100) substrate by a simple physical vapor deposition method. Thin film ZnO layer used as the nucleation site can avoid the contamination from the metal catalysts, and it can also control the growth direction of ZnO nanowires. Well-aligned ZnO nanowire arrays along the normal direction of the substrate can be obtained by controlling different growth temperature, which was demonstrated by XRD and FESEM analysis. A strong ultraviolet emission at room temperature was observed in all ZnO nanostructures. In addition, the growth mechanisms of the ZnO nanowires with different growth temperature is discussed in details.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 62, Issues 6–7, 15 March 2008, Pages 1092–1095
نویسندگان
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