کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1651328 1007624 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Formation of rod-crystals on CuInSe2 thin films by SILAR method using CH3–(CH2)11–C6H4–SO3Na surfactant
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Formation of rod-crystals on CuInSe2 thin films by SILAR method using CH3–(CH2)11–C6H4–SO3Na surfactant
چکیده انگلیسی

The formation of rod-crystals was observed on CuInSe2 thin films prepared by successive ionic layer adsorption and reaction (SILAR) method using sodium dodecylbenzene sulfonate (SDBS) as directing agent. Rod-crystals appeared on the surface of CuInSe2 thin film when adding SDBS into cationic precursor solution. FESEM, EDS, XRD and HRTEM were used to characterize the rod-crystals. The length of rod-crystals has a proportional relationship with SDBS amounts in the given scope of 0.001–0.01 mol/L. The stoichiometry of rod was close to 1:1:2 of CuInSe2, and rod growth of partially preferential orientation along [112] was observed. The growth of rod could be explained by steric hindrance effects of SDBS adsorbed on the inorganic deposit surface.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 62, Issue 26, 15 October 2008, Pages 4177–4180
نویسندگان
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