Properties of pulse plated ZnS films

Zinc sulphide thin films were deposited by the pulse plating technique at a duty cycle of 20% and different deposition current densities in the range 50–300 mA cm− 2. X-ray diffraction studies indicated the films to be polycrystalline with wurtzite structure. Direct optical band gap in the range of 3.6–4.0 eV was obtained for the films deposited at different deposition current densities. AES studies indicated a Zn/S ratio of 1.02–1.04. The room temperature resistivity values varied in the range of 3.5–17 Ω cm as the deposition current density decreases. Photoluminescence emission peak was observed at 388 nm at room temperature for an excitation of 325 nm.