کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1651700 | 1517333 | 2008 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Erbium concentration effects on the structural and photoluminescence properties of ZnO:Er films Erbium concentration effects on the structural and photoluminescence properties of ZnO:Er films](/preview/png/1651700.png)
Films of Er-doped ZnO (ZnO:Er) were prepared on MgO(100) wafers by ultrasonic spray pyrolysis at 550 °C. The concentration of Er in the deposition source varied from 1.0 to 3.0 wt.%. The crystallographic properties and surface morphologies of the films were investigated by X-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. Polycrystalline films were grown with a dominant direction of [002]. The grain size of the films was reduced by Er-doping. The ultraviolet (UV) photoluminescence properties of the films as a function of Er concentration were studied at low temperature (18 K) and room temperature (300 K). In undoped ZnO films, UV peaks at 3.375 and 3.360 eV were observed at 18 K, which are considered to be due to free excitons and donor-bound excitons, respectively. The peaks from the free exciton transitions disappeared at room temperature. Er-doping enhanced the room temperature UV emission of ZnO:Er films. ZnO:Er (2.0 wt.%) films prepared from the deposition source including 2.0 wt.% Er showed UV peaks which were ∼ 15 times stronger than those of undoped ZnO films.
Journal: Materials Letters - Volume 62, Issues 12–13, 30 April 2008, Pages 1835–1838