Ferroelectric properties of Bi3.4Dy0.6Ti3O12 thin films crystallized in N2

Bi3.4Dy0.6Ti3O12 (BDT) ferroelectric thin films were deposited on Pt/Ti/SiO2/Si substrates by chemical solution deposition (CSD) and annealed in an N2 environment after pre-annealing in air at 400 °C. The effect of crystallization temperature on the structural and electrical properties of the BDT films was studied. The BDT films annealed in N2 in the temperature range of 600 °C to 750 °C were crystallized well and the average grain size increased with increasing crystallization temperature, while the remanent polarization of the films is not a monotonic function of the crystallization temperature. The BDT films crystallized at 650 °C have the largest remanent polarization value of 2Pr = 39.4 μC/cm2, and a fatigue-free characteristic.