کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1652097 1007636 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Properties of zirconia thin films prepared by reactive magnetron sputtering
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Properties of zirconia thin films prepared by reactive magnetron sputtering
چکیده انگلیسی

The search for alternative dielectric materials with high dielectric constant, thermodynamic stable on silicon substrate and low direct tunneling current leads to oxide based materials like zirconia. Zirconia thin films were prepared by reactive magnetron sputtering. The capacitance voltage, ac and dc electrical characteristics were investigated and the values like fixed oxide charges were calculated and compared among the samples with and without annealing. Films annealed at 700 °C showed a dielectric constant ∼ 26 with interface trap densities of 1.629 × 1012 eV− 1 cm− 2.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 61, Issue 2, January 2007, Pages 502–505
نویسندگان
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