Orientation and growth behavior of CaHfO3 thin films on non-oxide substrates

The growth behavior of CaHfO3 on (001) Ni and Ge substrates was examined. CaHfO3 is a perovskite insulator that is suitable for applications as a buffer layer or gate dielectric. The tendency for CaHfO3 growth on both (001) Ni and (001) Ge substrates is to orient with the CaHfO3 (200) + (121) planes parallel to the surface, which corresponds to the (110) orientation in the pseudo-cubic geometry. This differs from that of CaHfO3 on perovskites, such as (001) LaAlO3, where a pseudo-cube-on-cube orientation is observed.