Stress-impedance effects in sandwiched FeCuNbCrSiB/Cu/FeCuNbCrSiB films

Sandwiched FeCuNbCrSiB/Cu/FeCuNbCrSiB films with a meander structure have been realized on silicon cantilever by Microelectromechanical Systems (MEMS), and the stress-impedance (SI) effects have been studied in the frequency range of 1–40 MHz. Experimental results show that the values of SI ratio increase with the deflection, and a large SI ratio of − 24.5% at 5 MHz with the deflection of 2 mm is obtained in the sandwiched FeCuNbCrSiB/Cu/FeCuNbCrSiB films, and the strain gauge factor is 1255 at 5 MHz, and is larger than the conventional metal strain gauge and semiconductor strain gauge, which is attractive for the applications of strain sensors.