کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1652427 | 1517340 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Anodic bonding of silicon onto glass by ion-cut technique and their characterization using high resolution X-ray diffraction studies
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Anodic bonding of single crystal silicon wafer with glass and subsequent splitting of the silicon wafer is done by ion-cut technique that involves proton bombardment at desired energies at a dose level > 5 Ã 1016 cmâ 2 and then subjected to the bond pair for heat treatment at â¼Â 550 °C. Details of the bonding and splitting processes have been discussed in the present study. The high resolution X-ray diffractometry studies have been performed and found that transferred single crystalline thin silicon layer has less crystalline perfection than the original wafer. It suggests that some improvement is still required in the ion-cut technique to improve the crystalline quality of the transferred layer before going to be used for the device applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 61, Issues 14â15, June 2007, Pages 3017-3020
Journal: Materials Letters - Volume 61, Issues 14â15, June 2007, Pages 3017-3020
نویسندگان
K.K. Maurya, S.K. Halder, S.P. Chowdhury, M.B. Dutt,