NiCuZn ferrite thin films for RF integrated inductors

Ni0.4Cu0.2Zn0.4Fe2O4 thin films were fabricated on Si substrates by sol-gel method and rapid thermal annealing (RTA), their structural and magnetic properties were characterized using an X-diffraction, scanning electron microscopy (SEM), atomic force microscopy (AFM), and alternating gradient magnetometer (AGM). The experimental results show that sol-gel method can lower the crystallization temperature of the magnetic thin films effectively, which is beneficial to the realization of low temperature process of magnetic thin films. The thin films in the paper exhibit excellent soft magnetic performance. Finally, a micro inductor with integrated Ni0.4Cu0.2Zn0.4Fe2O4 thin film for RF ICs was fabricated and measured. The work shows that Ni0.4Cu0.2Zn0.4Fe2O4 thin films can be integrated into RF integrated inductors.