Structure evolution and ferroelectric properties of Bi3.4Yb0.6Ti3O12 thin films crystallized under a moderate temperature

Ytterbium-doped Bi4Ti3O12 (Bi3.4Yb0.6Ti3O12, BYT) ferroelectric thin films were successfully deposited on Pt(111)/Ti/SiO2/Si(100) substrates by chemical solution deposition (CSD). X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to identify the crystal structure, the surface and cross-section morphology of the deposited ferroelectric films. Structure evolution and ferroelectric properties of the as-prepared thin films annealed under different temperatures (600 °C–750 °C) were studied in detail. Additionally, the mechanism concerning the dependence of electrical properties of the BYT ferroelectric thin films on the annealing temperature was discussed.