Chemical bond approach to activation energy of crystallization in some Se–Ge–M (M = Bi, In) chalcogenide glasses

The crystallization kinetics of glassy Se78−xGe22Bix (0 ≤ x ≤ 10) and Se80−xGe20Inx (0 ≤ x ≤ 15) alloys has been studied by an isothermal method. For this purpose, conductivity measurements are done during isothermal annealing at various temperatures between the glass transition and crystallization temperatures. Avrami's equation is used to calculate the activation energy of crystallization (Ec). The composition dependence of Ec in these alloys has been discussed using chemical bond approach.