Red InGaN-based light-emitting diodes with a novel europium (III) tetrabasic complex as mono-phosphor

A novel europium (III) tetrabasic complex, Eu (TPBDTFA)2 (TPATFA) Phen, was designed and synthesized. Photoluminescence measurements show that the complex exhibits strongly red emission due to the 5D0–7FJ transitions of Eu3+ ions with appropriate CIE (Commission Internationale de l'Eclairage, International Commission on Illumination) chromaticity coordinates (x = 0.64, y = 0.35) under 230–470 nm light excitation. The luminescence quantum yield for the Eu3+ complex is 0.126. Thermogravimetric analysis (TGA) confirms highly thermal stability of the complex with a decomposition temperature of 383.4 °C. All the characteristics indicate that the Eu3+ complex is highly efficiently red phosphor suitable to be excited by near UV–violet light. An intense red-emitting LED was fabricated by combining the mono-phosphor Eu (TPBDTFA)2 (TPATFA) Phen with a ∼395 nm emitting InGaN chip.