کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1653649 | 1007667 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Properties of Al-doped ZnO thin film sputtered from powder compacted target
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Properties of Al-doped ZnO thin film sputtered from powder compacted target Properties of Al-doped ZnO thin film sputtered from powder compacted target](/preview/png/1653649.png)
چکیده انگلیسی
We demonstrated the characterization of Al-doped ZnO thin film deposited from powder compacted target using RF magnetron sputtering. Various film thicknesses and substrate temperatures were used as deposition parameters for the purpose of obtaining optimum results. It shows that deposited AZO films have stronger preferred (002) c-axis crystalline orientation as both film thickness and substrate temperature increased. Film's resistivity and sheet resistance significantly decreased as film thickness increased. Higher surface roughness and irregular surface structure occurred at 200 °C substrate temperature. Films possess high optical transmittance of approximately 90% and demonstrated an optical band gap of 3.35 eV. At 200 °C substrate temperature, a resistivity of 4.4 Ã 10â 3 Ω cm was obtained.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 60, Issue 15, July 2006, Pages 1931-1935
Journal: Materials Letters - Volume 60, Issue 15, July 2006, Pages 1931-1935
نویسندگان
Kyoo Ho Kim, Rachmat Adhi Wibowo, Badrul Munir,