کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1653876 1007675 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Reaction mechanism of the nitridation of α-gallium oxide to gallium nitride under a flow of ammonia
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Reaction mechanism of the nitridation of α-gallium oxide to gallium nitride under a flow of ammonia
چکیده انگلیسی

The reaction mechanism of nitridation of α-gallium oxide (α-Ga2O3) to gallium nitride (GaN) under a flow of ammonia was deduced by observing the change in morphology of α-Ga2O3 powder coated with silicon substrate at an increasing reaction temperature. Upon their complete nitridation to GaN below 1000 °C, the morphology of α-Ga2O3 powder was retained. This strongly indicates that the conversion of α-Ga2O3 to GaN does not proceed through any gaseous intermediate but solid-state intermediates of gallium oxynitrides (GaOxNy). The occurrence of the intermediates was also evidenced by the change in weights of products with increasing the reaction temperature and by comparison of XRD patterns and 71Ga magic-angle spinning (MAS) NMR spectra of incomplete nitrided samples before and after oxidation.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 60, Issue 24, October 2006, Pages 2954–2957
نویسندگان
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