The anodic bonding between K4 glass and Si

This paper presents a systematic analysis of anodic bonding between silicon and K4 glass at a relatively low temperature in air. The loop current increases rapidly at the beginning of bonding and then decreases gradually, which proves the migration of ions during bonding. Results show that the intimately contacted area of K4 glass and Si increases with the bonding temperature increases from 300 °C to 400 °C. And the increase of bonding voltage also can increase the intimately contacted area. Good bonding can be achieved with different bonding temperatures (300–450 °C) and anodic voltages (700–850 V). The bonding mechanism is investigated by analyzing the microstructure of the bonding interface.