کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1654154 | 1007683 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thermal diffusivity of surface-microstructured silicon measured by photothermal deflection technique
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The thermal diffusivity of surface-microstructured silicon, prepared by cumulative irradiating with femtosecond laser pulses in ambient gas of SF6, was measured at room temperature using laser-induced photothermal deflection technique. The spikes formed on the surface of silicon after irradiation are of elliptic conical shape due to the linearly polarized laser irradiation. The thermal diffusivity of surface-microstructured silicon is sensitive to the orientation of measurements, and decreases by 17.7–29.9% compared with that of unstructured silicon. The experimental results also show that the thermal diffusivity of surface-microstructured silicon decreases with the increasing of the height of spikes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 60, Issue 1, January 2006, Pages 63–66
Journal: Materials Letters - Volume 60, Issue 1, January 2006, Pages 63–66
نویسندگان
Xiao Chen, Jingtao Zhu, Gang Yin, Li Zhao,