کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1654204 1007684 2005 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
High quality β-FeSi2 epitaxial film grown on hydrogen terminated Si (111) by molecular beam epitaxy
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
High quality β-FeSi2 epitaxial film grown on hydrogen terminated Si (111) by molecular beam epitaxy
چکیده انگلیسی

A high quality β-FeSi2 epitaxial film with the thickness of 180 nm has been successfully grown for the first time on hydrogen terminated Si (111) at 580 °C by using solid source molecular beam epitaxy (SS-MBE). The β-FeSi2 film grown with stoichiometric Fe / Si source flux ratio 1:2 has a superior morphology and crystallinity comparing to the published results of the films grown by other methods.X-ray diffraction (XRD) spectra confirmed that the obtained β-FeSi2 film was single crystal. Scanning electron microscope (SEM) images showed a good morphology with large flat surface areas of the obtained β-FeSi2 film.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 59, Issue 18, August 2005, Pages 2370–2373
نویسندگان
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