Nanowire design by dislocation technology

We proposed new guidelines for designing ceramic devices with a high-density of nanowires or periodically aligned nanowires in single crystals by controlling dislocation distribution, type and composition. Insulating sapphire and YSZ single crystal were used as model systems in which high-densities of dislocations and periodically aligned dislocations were introduced by high-temperature compression tests and fabrication of bicrystals with low-angle grain boundaries. The electron and ion conductivities were measured for the dislocation introduced crystals, and it was concluded that the proposed techniques are very useful for giving new functions to any single crystal.