Electrical properties of the grain boundaries of oxygen ion conductors: Acceptor-doped zirconia and ceria

This article reviews the current understanding of the electrical properties of the grain boundaries of acceptor-doped zirconia and ceria, however, with an emphasis on the grain-boundary defect structure. From an electrical point of view, a grain boundary consists of a grain-boundary core and two adjacent space-charge layers. The grain-boundary cores of acceptor-doped zirconia and ceria are positively charged, probably owing to the oxygen vacancy enrichment there. Oxygen vacancies are therefore depleted in the space-charge layer. The grain-boundary conductivities of acceptor-doped zirconia and ceria are at least two orders of magnitude lower than the corresponding bulk values, depending on temperature and dopant level. Such a phenomenon is due to the facts: (1) that oxygen vacancies are severely depleted in the space-charge layer, and (2) that the grain-boundary impurity phase blocks the ionic transport across the grain boundaries by decreasing the conduction path width and constricting current lines. In materials of high purity, the effect of the space-charge depletion layer is dominant; however, in materials of normal purity, the effect of the grain-boundary impurity phase is dominant. A Schottky barrier model satisfactorily explains all the phenomenological observations of the grain-boundary electrical properties of materials of high purity, and experimental evidence soundly supports the model. Various factors (alumina addition and grain size) influencing the grain-boundary electrical properties are discussed, and some special aspects of nanocrystalline materials are highlighted.