کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1656256 | 1008236 | 2016 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Comparative study between Au/Pd/Cu and Au/Pd(P)/Cu films in soldering applications
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
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چکیده انگلیسی
A comparative study between Au/Pd/Cu and Au/Pd(2-5Â wt% P)/Cu films in soldering applications was carried out by means of field-emission scanning electron microscopy (FE-SEM), field-emission electron probe X-ray microanalysis (FE-EPMA), ultraviolet/visible/near infrared (UV/VIS/NIR) spectrophotometry, X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), and high-speed ball shear (HSBS) test. We investigated the interfacial microstructure via FE-SEM and FE-EPMA, the mechanical properties of solder joints via HSBS test, and the light properties and the microstructure of the exterior surfaces of solder bumps via UV/VIS/NIR spectrophotometry, XPS, and TEM. The interfacial microstructures/mechanical properties (with Cu pads) were approximately independent of the P content in the Pd(P) films. However, the discoloration in the solder bumps resulting from the formation of a SnO2 nanolayer (or Au/Pd/Cu) could be greatly improved by replacing it with a Sn-O-P phase through a minor addition of P into the Pd film. This suggested that the Au/Pd(P)/Cu pads enabled an appropriate solderability. The results of the above investigations indicated that the dissolved P from the Pd(P) film during soldering played a significant role in determining the light properties of solder joints, even though the Pd(P) film was less than one micron thick and its P content was quite limited (2-5Â wt%).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 303, Part A, 15 October 2016, Pages 103-111
Journal: Surface and Coatings Technology - Volume 303, Part A, 15 October 2016, Pages 103-111
نویسندگان
P.T. Lee, W.Z. Hsieh, T.C. Yeh, H.K. Wang, C.E. Ho,