کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1656271 | 1008236 | 2016 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Microstructures, electrical and magnetic properties of (Ga, Co)-ZnO films by radio frequency magnetron co-sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Microstructures, electrical and magnetic properties of (Ga, Co)-ZnO films by radio frequency magnetron co-sputtering Microstructures, electrical and magnetic properties of (Ga, Co)-ZnO films by radio frequency magnetron co-sputtering](/preview/png/1656271.png)
چکیده انگلیسی
In this study, [Co0.05GaxZn(0.95 â x)O] films with different Ga contents were co-sputtered on glass substrates by rf magnetron sputtering. The content of Co in the films was fixed at ~ 5 at.%. The content of x [Ga/(Ga + Co + Zn)] varied from 0 to 3.2 at.%. As analyzed by Hall effect measurement, the resistivity (Ï) of the film is 42.90 Ω·cm when x content is 0. When the content of x increases to 3.2 at.%, the Ï value drops greatly to 4.93 Ã 10â 3 Ω·cm. It is found that both the surface roughness and grain size of columnar (Ga, Co)-ZnO films decrease significantly after Ga addition into the films, but the phase structure remains almost unchanged. In magnetic properties analysis, two distinct mechanisms of bound magnetic polaron and carrier-mediated exchange lead to the films presenting different ferromagnetic behaviors in various carrier density regions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 303, Part A, 15 October 2016, Pages 203-208
Journal: Surface and Coatings Technology - Volume 303, Part A, 15 October 2016, Pages 203-208
نویسندگان
Sheng-Chi Chen, Chung-Hsien Wang, Hui Sun, Chao-Kuang Wen, Chao-Feng Lu, Chia-Lung Tsai, Yi-Keng Fu, Tung-Han Chuang,