کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1657763 | 1517647 | 2013 | 4 صفحه PDF | دانلود رایگان |
We prepared anatase TiO2 films by sol–gel method under three thermal firing conditions to investigate the bipolar resistive switching (BRS) and unipolar resistive switching (URS) in Ag/TiO2/Pt structure. The devices are URS in an air atmosphere at 760 Torr, while those in an oxygen ambience at 1 Torr show BRS accompanying with forming-free and self-compliance. By examining the X-ray photoelectron spectroscopy (XPS) spectrum, different non-lattice oxygen content is observed. High concentration of oxygen vacancy is expected under oxygen-deficient treatment, and that would determine the electrode/oxide interface property and induce switching mode of polarity dependent or not. An improved performance of operation voltage dispersion down to 0.5 V and endurance up to 3000 cycles is obtained for those in reducing Ar.
► Different amounts of non-lattice oxygen were observed in XPS analysis.
► The 3000 endurance cycles and 0.5 V operation voltage dispersion were obtained.
► The TiO2-based RRAMs have great potential for multilevel operation storage.
Journal: Surface and Coatings Technology - Volume 231, 25 September 2013, Pages 399–402