Carrier mobility enhancement versus channel direction in highly-doped Si

► Carrier drift mobility μ vs. Si channel direction study using CAOT/DHE technique. ► Hole μ of B-doped Si with < 100 > channel direction enhanced vs. < 110 > direction. ► Electron μ of As-doped Si with < 100 > channel direction not enhanced vs. < 110 > direction. ► However electron μ of P-doped Si with < 100 > channel direction enhanced vs. < 110 > direction.