کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1658618 1008350 2012 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Zinc oxide (ZnO) grown on flexible substrate using dual-plasma-enhanced metalorganic vapor deposition (DPEMOCVD)
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Zinc oxide (ZnO) grown on flexible substrate using dual-plasma-enhanced metalorganic vapor deposition (DPEMOCVD)
چکیده انگلیسی

This study investigates the temperature dependence of zinc oxide (ZnO) grown on polyestersulfone (PES) flexible substrates using the dual plasma-enhanced metal–organic chemical vapor deposition (DPEMOCVD) system. The proposed method uses a direct voltage (DC) and radio-frequency (RF) plasma system. The group-VI precursor, oxygen (O2), can be completely ionized by the DC plasma system. The effect of optimal DC plasma power on ZnO thin films is thoroughly investigated using X-ray diffraction (XRD). The experimental results indicate that the crystalline structure and optical and electrical properties of ZnO thin films grown on PES substrates are dependent on the deposition temperature. The optimum deposition temperature for ZnO thin films deposited on PES substrates is 185 °C, whereas the DC and RF plasma power is 1.8 W and 350 W, respectively. Additionally, the wettability characteristic regarding the UV irradiation time was assessed by measuring the water contact angle. Under the UV irradiation for 60 min, the ZnO film grown at 185 °C represents a low contact angle of 5°, which approaches to a superhydrophilic surface.


► We used a novel plasma-enhanced metal–organic chemical vapor deposition system with dual plasma system to grow ZnO thin film.
► The ZnO thin film is highly hydrophilic with a low contact angle of 5° under UV irradiation for 60 min.
► The ZnO thin film can be deposited on flexible substrate by CVD method.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 206, Issue 14, 15 March 2012, Pages 3258–3263
نویسندگان
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