کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1658860 1008362 2011 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Silicon orientation effects on surface blistering characteristics due to hydrogen ion implantation
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Silicon orientation effects on surface blistering characteristics due to hydrogen ion implantation
چکیده انگلیسی

This study attempted to examine surface blistering characteristics induced by room-temperature implantation of 5 × 1016 cm− 2 40 keV hydrogen ions into Si<111> wafers followed by furnace annealing treatments at various temperatures for a duration of 1 h. The results obtained in our previous work [1], in which Si<100> wafers were used, were adopted for making comparisons. A comparison of Si<111> and Si<100> resulted in blister distributions with greater areal number densities, smaller diameters, similar covered-area fractions, higher threshold and saturation post-annealing temperatures, larger apparent activation energy levels, smaller hydrogen-trapping and oxygen-gettering depths, higher threshold post-annealing temperatures for hydrogen trapping and oxygen gettering, and lower SIMS peak intensities at hydrogen-trapping and oxygen-gettering depths. Furthermore, the K values for Si<111> were less than those for Si<100> when post-annealing temperatures ranged from 200 to 450 °C. Conversely, just the opposite was true when post-annealing temperatures ranged from 450 to 550 °C. In addition, the crater distributions achieved in Si<111> had lower areal number densities and covered-area fractions, higher threshold and saturation post-annealing temperatures, and smaller crater depths compared to Si<100>. In both Si<111> and Si<100>, areal number densities and covered-area fractions in the crater distributions were lower than those in the blister distributions.

Research Highlights
► We studied surface blistering characteristics due to H+ implanted in Si<111> followed by furnace annealing at various temperatures for 1 h.
► The blister and crater distributions are investigated and also compared to those using Si<100> to conclude post-annealing-temperature and Si-orientation dependence.
► A post-annealing temperature of 550 °C is most optimal for both Si<111> and Si<100>.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 206, Issue 5, 25 November 2011, Pages 820–824
نویسندگان
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