High-speed epitaxial growth of (100)-oriented CeO2 film on r-cut sapphire by laser chemical vapor deposition

(100)-oriented CeO2 film was prepared on r  -cut sapphire ((11¯02)Al2O3) by laser chemical vapor deposition at laser powers from 123 to 182 W with deposition temperatures ranging from 1042 to 1122 K. The (100) CeO2 films grew epitaxially on (11¯02)Al2O3 substrate with the in-plane orientation relationship of CeO2 [010] // Al2O3[1¯101] and CeO2 [001] // Al2O3[112¯0]. The surface morphology of the CeO2 films was characterized by elongated grains with truncated pyramidal cap. The deposition rate of the CeO2 film was 10–15 μm h− 1, about 10–15 times higher than those of conventional metalorganic CVD.

Research Highlights
► High-speed epitaxial growth of (100) CeO2 film on r-cut sapphire by laser CVD.
► Laser promotes chemical reaction and mobility of adsorbed species in CVD process.
► Highly-aligned faceted columnar epitaxially grew even at a high deposition rate.