کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1659305 1517682 2010 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
CoCrMo alloy treated by floating potential plasma assisted nitriding and plasma based ion implantation: Influence of the hydrogen content and of the ion energy on the nitrogen incorporation
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
CoCrMo alloy treated by floating potential plasma assisted nitriding and plasma based ion implantation: Influence of the hydrogen content and of the ion energy on the nitrogen incorporation
چکیده انگلیسی

Nitriding was performed on a medical grade CoCrMo alloy at 400 °C in N2 or N2–H2 atmosphere at a working pressure of 0.84 Pa for 2 h. Various surface treatment techniques were used to incorporate nitrogen into the CoCrMo alloy: without any plasma assistance, by floating potential radio-frequency plasma assisted nitriding (FPPAN), by plasma based ion implantation (PBII) with several high voltage accelerations (up to 20 kV). Without plasma activation, no nitrogen is incorporated in the CoCrMo. On the contrary, all the plasma or PBII treated samples show the formation of a nitrogen-rich f.c.c. γN phase. The layer nitrided over few microns has a nitrogen composition ranging from 30 at.% to about 20 at.% near the nitrided layer–substrate interface, with an enhanced surface microhardness. Hydrogen is found to enhance the nitriding efficiency. Without hydrogen, a high voltage polarization provides a supplementary amount of implanted nitrogen available for further diffusion and the sputtering of the surface passive oxide. So, with limited high voltages, thicker layers with higher amounts of nitrogen can be achieved by PBII compared to plasma nitriding. However, with higher voltages, the sputtering becomes too important and the nitride layer is thinner.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 204, Issues 18–19, 25 June 2010, Pages 2913–2918
نویسندگان
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