کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1659660 | 1008387 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of the thickness of the channel layer on the device performance of InGaZnO thin-film-transistors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
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چکیده انگلیسی
InGaZnO thin-film-transistors (TFTs) with various channel thicknesses were fabricated with a bottom gate configuration on SiO2/p-Si substrates at room temperature by radio frequency magnetron sputtering. The thickness of the InGaZnO channel layer ranged from 20 to 200 nm and the width/length ratio of the channel was 10. In the channel layers with an electrical resistivity of ~ 103 Ω cm, TFTs with a 130 nm thick layer showed the best performance, such as on/off-current ratio (~ 107), channel field-effect mobility (7.2 cm2/V s) and subthreshold swing (0.7 V/dec). In addition, the InGaZnO TFT device showed slight gate bias-induced hysteresis due to the small charge traps in the active layer and long-term reliability.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 205, Supplement 1, 25 December 2010, Pages S168–S171
Journal: Surface and Coatings Technology - Volume 205, Supplement 1, 25 December 2010, Pages S168–S171
نویسندگان
C.H. Woo, Y.Y. Kim, B.H. Kong, H.K. Cho,