کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1659856 | 1008391 | 2010 | 6 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Preparation of mesoporous silica thin films on polystyrene substrate by electrochemically induced sol–gel technique Preparation of mesoporous silica thin films on polystyrene substrate by electrochemically induced sol–gel technique](/preview/png/1659856.png)
The mesoporous silica thin films with an oriented hexagonal mesostructure were prepared on polystyrene (PS) substrate by electrochemically induced sol–gel technique using tetraethoxyorthosilicate (TEOS) as silica source and cetyltrimethyl-ammonium bromide (CTAB) as structure-directing agent. Prior to coating deposition, the PS substrate was made hydrophilic by sulfonation with concentrated sulfuric acid for 72 h to provide better adhesion of silica films to the substrate. The effects of synthesis parameters required to obtain well-ordered crack-free layers, such as deposition voltage and deposition time, were evaluated in detail. The samples were characterized by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), Fourier transform infrared-Attenuated total reflectance (FT-IR-ATR), small-angle X-ray diffraction (SAXRD) and transmission electron microscopy (TEM). According to the experimental results, the deposition voltage of 3.6 V and the deposition time of 10 s were determined as the optimum conditions. The silica films with the thickness of ca. 1.5 μm obtained under this condition was crack-free smooth and had a hexagonally ordered pore array pattern nanostructure. The pore diameter was about 3 nm and the distance between the neighboring pore centers was ca. 4.6 nm.
Journal: Surface and Coatings Technology - Volume 204, Issue 14, 15 April 2010, Pages 2187–2192