کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1660159 | 1517689 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Embedded SiGe nanoparticles formed by atom beam co-sputtering of Si, Ge, SiO2
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Using atom beam co-sputtering of SiO2, Ge and Si targets, composite films containing Si, Ge and SiOx at different compositions were prepared and annealed at different temperatures. The influence of annealing temperatures on phase formation in the composite films was studied. The films were characterized using UV-vis absorption spectroscopy, FTIR, and GXRD. GXRD plots show diffraction peaks due to SiGe alloy nanoparticles and no peaks due to elemental Si or Ge. The nanoparticle size estimated from GXRD is 4.7Â nm. UV-visible spectra show the red shift in absorption edge as the annealing temperature is increased. FTIR spectra reveal phase separation of SiGe alloy from SiOx matrix, upon annealing.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 203, Issues 17â18, 15 June 2009, Pages 2482-2485
Journal: Surface and Coatings Technology - Volume 203, Issues 17â18, 15 June 2009, Pages 2482-2485
نویسندگان
Kapil U. Joshi, D. Kabiraj, A.M. Narsale, D.K. Avasthi, T.N. Warang, D.C. Kothari,