کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1660661 1008409 2008 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Silicon nitride and oxynitride films deposited from organosilicon plasmas: ToF–SIMS characterization with multivariate analysis
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Silicon nitride and oxynitride films deposited from organosilicon plasmas: ToF–SIMS characterization with multivariate analysis
چکیده انگلیسی

In this work bis(dimethylamino)dimethylsilane (BDMADMS) has been utilized as precursor for plasma enhanced chemical vapour deposition (PECVD) of silicon nitride-like and silicon oxynitride-like thin films. The effect of input power and O2/BDMADMS ratio on the film surface chemistry has been investigated by time-of-flight secondary ion mass spectrometry (ToF–SIMS) and principal component analysis (PCA). Changes in surface composition have been correlated to infrared (FT-IR) and X-ray photoelectron spectroscopy (XPS) analyses. The results show that the PCs profile obtained by increasing input power during the deposition is correlated to the transition from an organic to an inorganic silicon nitride-like coating while at high input power, if the oxygen concentration in the feed is increased, the following transition occurs: inorganic silicon nitride-like → oxynitride-like → oxide-like.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 202, Issue 9, 1 February 2008, Pages 1606–1614
نویسندگان
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