Effect of pulse rise time on charging effects in plasma immersion ion implantation with dielectric substrates with planar and cylindrical geometries

Using a one-dimensional self-consistent fluid model, the effect of pulse rise time on charging effects at dielectric surfaces is investigated during plasma immersion ion implantation (PIII) with planar and cylindrical geometries. The numerical results demonstrate that the pulse rise time plays an important role in PIII process with dielectric substrates. It is found that the charge dose accumulated on the dielectric surface is significant as decreasing pulse rise time, and the surface potential decreases at the later stage of the pulse, which results in the lower ion impact energy. On the other hand, the longer pulse rise time would lead to the lower charge dose accumulated on the dielectric surface and higher ion impact energy at the later stage of the pulse, which would elevate the effective implanted dose and introduce the ions to the depth deep enough for surface modification.