کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1660821 | 1008413 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Secondary electron suppression in nitrogen plasma ion implantation using a low DC magnetic field
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
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چکیده انگلیسی
Experiments aiming at the reduction or even total suppression of secondary electrons during the plasma immersion ion implantation were carried out using a plasma device with low DC magnetic field. Comparison of ion implantations in B = 0 and another case with B = 43 G, indicated that the magnetic field was effective to suppress SE flow in the direction transversal to B but only partial suppression was attained in the longitudinal direction. However, these results are already significant since the efficiency of implantation was increased and the flow of SE to the walls became localized to the regions with B crossing the walls.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 201, Issue 15, 23 April 2007, Pages 6597–6600
Journal: Surface and Coatings Technology - Volume 201, Issue 15, 23 April 2007, Pages 6597–6600
نویسندگان
M. Ueda, I.H. Tan, R.S. Dallaqua, J.O. Rossi,