کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1661004 | 1517694 | 2008 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Nanoscale surface and interface engineering: Why plasma-aided? Nanoscale surface and interface engineering: Why plasma-aided?](/preview/png/1661004.png)
This contribution provides arguments why and in which cases low-temperature plasmas should be used for nanoscale surface and interface engineering and discusses several advantages offered by plasma-based processes and tools compared to neutral gas fabrication routes. Relevant processes involve nanotexturing (etching, sputtering, nanostructuring, pre-patterning, etc.) and composition/structure control at nanoscales (phases, layering, elemental presence, doping, functionalization, etc.) and complex combinations thereof. A case study in p-Si/n-Si solar cell junction exemplifies a successful use of inductively coupled plasma-assisted RF magnetron sputtering for nanoscale fabrication of a bi-layered stack of unconventionally doped highly-crystalline silicon nanofilms with engineered high-quality interfaces.
Journal: Surface and Coatings Technology - Volume 202, Issues 22–23, 30 August 2008, Pages 5314–5318