کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1662257 | 1517696 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Chemical modeling of a high-density inductively-coupled plasma reactor containing silane
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We carried out the modeling of chemical reactions in a silane-containing remote Inductively Coupled Plasma Enhanced Chemical Vapor Deposition (ICPECVD) system, intended for deposition of silicon, silicon oxide, and silicon nitride layers. The required electron densities and Electron Energy Distribution Functions (EEDF) were taken from our earlier Langmuir-probe measurements. The EEDF exhibited a fraction (0.5%) of fast electrons in the energy range between 20 and 40Â eV, strongly deviating from Maxwell-Boltzmann (MB) distribution. We considered 16 electron impact dissociation/ionization reactions and 26 secondary reactions for homogeneous propagation of plasma species. We noticed a significant difference (orders of magnitude) between the concentrations of the species obtained using experimental EEDFs and MB energy distributions, pointing to the importance of the fast electron tail. For silicon oxide films, a qualitative agreement between the radical densities in plasma at different total pressures and the deposition rate was observed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 201, Issues 22â23, 25 September 2007, Pages 8849-8853
Journal: Surface and Coatings Technology - Volume 201, Issues 22â23, 25 September 2007, Pages 8849-8853
نویسندگان
A.Y. Kovalgin, A. Boogaard, I. Brunets, J. Holleman, J. Schmitz,