کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1662281 | 1517696 | 2007 | 5 صفحه PDF | دانلود رایگان |
Silicon dioxide films were deposited by means of remote inductively coupled plasma enhanced chemical vapor deposition (ICPECVD) in Ar–N2O–SiH4 plasma at 150 °C and pressures between 1 and 6 Pa. Chemical modeling of our plasma indicated an increased fraction of SiH3 radicals at 6 Pa (compared to SiH2, SiH, and Si species), while at 1 Pa their relative contribution on film growth should be much smaller. Layer growth from SiH3 radicals would result in better dielectric quality.We found that the films contained a high amount of positive charge and exhibited large leakage currents at 1 Pa, while films with lower positive charge and much lower leakage currents were grown at 6 Pa. The deposition rate was ∼ 4.5 nm/min at 1–2 Pa and 3.5 nm/min at 6 Pa. The lower growth-rate at 6 Pa could be ascribed to the formation of denser films, as well as to the changing plasma and surface chemistry. These results were consistent with chemical modeling.
Journal: Surface and Coatings Technology - Volume 201, Issues 22–23, 25 September 2007, Pages 8976–8980