کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1662283 | 1517696 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Preparation of nanocrystalline cubic silicon carbide thin films by hot-wire CVD at various filament-to-substrate distances
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Nanocrystalline cubic silicon carbide (nc-3C-SiC) thin films were prepared by hot-wire chemical vapor deposition from SiH4/CH4/H2 gases and influences of filament-to-substrate distance, dF-S, and CH4 gas flow rate, F(CH4), on structural properties of nc-3C-SiC thin films were investigated. SiC-nanocrystallite growth was enhanced with increasing dF-S form 10 to 26Â mm and was prevented with increasing dF-S from 26 to 46Â mm. And the crystallinity was improved with increasing F(CH4) from 1.0 to 1.5Â sccm but deteriorated with increasing F(CH4) from 1.5 to 2.0Â sccm. These findings can be explained by the changes in the fluxes of H and CH3 radicals with dF-S and F(CH4).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 201, Issues 22â23, 25 September 2007, Pages 8986-8990
Journal: Surface and Coatings Technology - Volume 201, Issues 22â23, 25 September 2007, Pages 8986-8990
نویسندگان
Akimori Tabata, Yusuke Komura,