کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1662294 | 1517696 | 2007 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Molecular design of improved precursors for the MOCVD of oxides used in microelectronics
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Molecular design of improved precursors for the MOCVD of oxides used in microelectronics Molecular design of improved precursors for the MOCVD of oxides used in microelectronics](/preview/png/1662294.png)
چکیده انگلیسی
Metalorganic chemical vapour deposition (MOCVD) is an attractive technique for the deposition of dielectric and ferroelectric oxide thin films such as ZrO2, HfO2, Hf-aluminate and -silicate, lanthanide oxides, Pb(Zr,Ti)O3 and SrBi2Ta2O9, which have a variety of applications in microelectronic devices. In this paper the molecular design of a range of new oxide precursors is described. It is shown how the careful selection and design of precursor ligands, such as alkoxides and β-diketonates, leads to precursors with improved physical properties and significantly enhanced MOCVD performance.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 201, Issues 22â23, 25 September 2007, Pages 9046-9054
Journal: Surface and Coatings Technology - Volume 201, Issues 22â23, 25 September 2007, Pages 9046-9054
نویسندگان
Anthony C. Jones, Helen C. Aspinall, Paul R. Chalker,